IndiumV3, Main, Repository, bibRecord, 000389

Systematic analysis of the spectroscopic characteristics of 3d ions in a free state and some cubic crystals

Identifieur interne : 000389 ( Main/Repository ); précédent : 000388; suivant : 000390

Systematic analysis of the spectroscopic characteristics of 3d ions in a free state and some cubic crystals

Auteurs : RBID : Pascal:13-0337303

Descripteurs français

Pascal (Inist)
- Champ cristallin, Composé ternaire, Grenat aluminium yttrium, Semiconducteur III-V, Composé binaire, Matériau optique, Cristal cubique, Arséniure de gallium, Arséniure d'aluminium, Arséniure d'indium, Grenats, Effet néphélauxétique, YAG, GaAs, Gd3Ga5O12, GGG, Al O Y, As Ga, Grenat gadolinium gallium, Ga Gd O, AlAs, InAs, As In, 4270.

English descriptors

KwdEn :
- Aluminium arsenides, Binary compounds, Crystal field, Cubic crystals, Gallium arsenides, Garnets, III-V semiconductors, Indium arsenides, Nephelauxetic effect, Optical materials, Ternary compounds, YAG.

Abstract

Systematic consideration of the spectroscopic properties of the di-, tri- and tetravalent 3d ions in a free state is presented. Variations of the Racah parameters B, C, spin-orbit interaction constant ζ and averaged values of the 3d electrons' radial coordinate across the selected groups of 3d ions were considered; functional dependencies between the above-mentioned parameters were obtained. It was shown that the knowledge of one out of three parameters (B, C, ζ) allows to estimate the remaining two. Systematic behavior of the trivalent 3d ions in some cubic crystals (Y₃Al₅O₁₂ and GaAs) was also considered; different degree of the nephelauxetic effect for the B and C parameters in Y₃Al₅O₁₂ was uncovered. Using the literature data on the crystal field parameters for trivalent 3d ions in Y₃Al₅O₁₂ and GaAs, the values of the crystal field parameters for Gd₃Ga₅O₁₂, AlAs and InAs were estimated.

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Pascal:13-0337303

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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Systematic analysis of the spectroscopic characteristics of 3d ions in a free state and some cubic crystals</title>
<author><name sortKey="Brik, M G" uniqKey="Brik M">M. G. Brik</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Physics, University of Tartu, Riia 142</s1>
<s2>Tartu 51014</s2>
<s3>EST</s3>
<sZ>1 aut.</sZ>
</inist:fA14>
<country>Estonie</country>
<wicri:noRegion>Tartu 51014</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Srivastava, A M" uniqKey="Srivastava A">A. M. Srivastava</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>GE Global Research, One Research Circle</s1>
<s2>Niskayuna, NY 12309</s2>
<s3>USA</s3>
<sZ>2 aut.</sZ>
</inist:fA14>
<country>États-Unis</country>
<wicri:noRegion>Niskayuna, NY 12309</wicri:noRegion>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">13-0337303</idno>
<date when="2013">2013</date>
<idno type="stanalyst">PASCAL 13-0337303 INIST</idno>
<idno type="RBID">Pascal:13-0337303</idno>
<idno type="wicri:Area/Main/Corpus">000590</idno>
<idno type="wicri:Area/Main/Repository">000389</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">0925-3467</idno>
<title level="j" type="abbreviated">Opt. mater. : (Amst.)</title>
<title level="j" type="main">Optical materials : (Amsterdam)</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aluminium arsenides</term>
<term>Binary compounds</term>
<term>Crystal field</term>
<term>Cubic crystals</term>
<term>Gallium arsenides</term>
<term>Garnets</term>
<term>III-V semiconductors</term>
<term>Indium arsenides</term>
<term>Nephelauxetic effect</term>
<term>Optical materials</term>
<term>Ternary compounds</term>
<term>YAG</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Champ cristallin</term>
<term>Composé ternaire</term>
<term>Grenat aluminium yttrium</term>
<term>Semiconducteur III-V</term>
<term>Composé binaire</term>
<term>Matériau optique</term>
<term>Cristal cubique</term>
<term>Arséniure de gallium</term>
<term>Arséniure d'aluminium</term>
<term>Arséniure d'indium</term>
<term>Grenats</term>
<term>Effet néphélauxétique</term>
<term>YAG</term>
<term>GaAs</term>
<term>Gd3Ga5O12</term>
<term>GGG</term>
<term>Al O Y</term>
<term>As Ga</term>
<term>Grenat gadolinium gallium</term>
<term>Ga Gd O</term>
<term>AlAs</term>
<term>InAs</term>
<term>As In</term>
<term>4270</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">Systematic consideration of the spectroscopic properties of the di-, tri- and tetravalent 3d ions in a free state is presented. Variations of the Racah parameters B, C, spin-orbit interaction constant ζ and averaged values of the 3d electrons' radial coordinate across the selected groups of 3d ions were considered; functional dependencies between the above-mentioned parameters were obtained. It was shown that the knowledge of one out of three parameters (B, C, ζ) allows to estimate the remaining two. Systematic behavior of the trivalent 3d ions in some cubic crystals (Y<sub>3</sub>
Al<sub>5</sub>
O<sub>12</sub>
 and GaAs) was also considered; different degree of the nephelauxetic effect for the B and C parameters in Y<sub>3</sub>
Al<sub>5</sub>
O<sub>12</sub>
 was uncovered. Using the literature data on the crystal field parameters for trivalent 3d ions in Y<sub>3</sub>
Al<sub>5</sub>
O<sub>12</sub>
 and GaAs, the values of the crystal field parameters for Gd<sub>3</sub>
Ga<sub>5</sub>
O<sub>12</sub>
, AlAs and InAs were estimated.</div>
</front>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0925-3467</s0>
</fA01>
<fA03 i2="1"><s0>Opt. mater. : (Amst.)</s0>
</fA03>
<fA05><s2>35</s2>
</fA05>
<fA06><s2>10</s2>
</fA06>
<fA08 i1="01" i2="1" l="ENG"><s1>Systematic analysis of the spectroscopic characteristics of 3d ions in a free state and some cubic crystals</s1>
</fA08>
<fA09 i1="01" i2="1" l="ENG"><s1>3rd International Cobference on the Physics of Optical Materials and Devices September 2-6, 2012, Belgrade, Republic of Serbia</s1>
</fA09>
<fA11 i1="01" i2="1"><s1>BRIK (M. G.)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>SRIVASTAVA (A. M.)</s1>
</fA11>
<fA12 i1="01" i2="1"><s1>VIANA (Bruno)</s1>
<s9>ed.</s9>
</fA12>
<fA12 i1="02" i2="1"><s1>DRAMICANIN (Miroslav)</s1>
<s9>ed.</s9>
</fA12>
<fA14 i1="01"><s1>Institute of Physics, University of Tartu, Riia 142</s1>
<s2>Tartu 51014</s2>
<s3>EST</s3>
<sZ>1 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>GE Global Research, One Research Circle</s1>
<s2>Niskayuna, NY 12309</s2>
<s3>USA</s3>
<sZ>2 aut.</sZ>
</fA14>
<fA18 i1="01" i2="1"><s1>Vinca Institute</s1>
<s3>SRB</s3>
<s9>org-cong.</s9>
</fA18>
<fA18 i1="02" i2="1"><s1>Laboratoire de Chimie de la Matière Condensée de Paris</s1>
<s3>FRA</s3>
<s9>org-cong.</s9>
</fA18>
<fA20><s1>1776-1782</s1>
</fA20>
<fA21><s1>2013</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>22598</s2>
<s5>354000505184150040</s5>
</fA43>
<fA44><s0>0000</s0>
<s1>© 2013 INIST-CNRS. All rights reserved.</s1>
</fA44>
<fA45><s0>18 ref.</s0>
</fA45>
<fA47 i1="01" i2="1"><s0>13-0337303</s0>
</fA47>
<fA60><s1>P</s1>
<s2>C</s2>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>Optical materials : (Amsterdam)</s0>
</fA64>
<fA66 i1="01"><s0>GBR</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>Systematic consideration of the spectroscopic properties of the di-, tri- and tetravalent 3d ions in a free state is presented. Variations of the Racah parameters B, C, spin-orbit interaction constant ζ and averaged values of the 3d electrons' radial coordinate across the selected groups of 3d ions were considered; functional dependencies between the above-mentioned parameters were obtained. It was shown that the knowledge of one out of three parameters (B, C, ζ) allows to estimate the remaining two. Systematic behavior of the trivalent 3d ions in some cubic crystals (Y<sub>3</sub>
Al<sub>5</sub>
O<sub>12</sub>
 and GaAs) was also considered; different degree of the nephelauxetic effect for the B and C parameters in Y<sub>3</sub>
Al<sub>5</sub>
O<sub>12</sub>
 was uncovered. Using the literature data on the crystal field parameters for trivalent 3d ions in Y<sub>3</sub>
Al<sub>5</sub>
O<sub>12</sub>
 and GaAs, the values of the crystal field parameters for Gd<sub>3</sub>
Ga<sub>5</sub>
O<sub>12</sub>
, AlAs and InAs were estimated.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B40B70</s0>
</fC02>
<fC03 i1="01" i2="3" l="FRE"><s0>Champ cristallin</s0>
<s5>23</s5>
</fC03>
<fC03 i1="01" i2="3" l="ENG"><s0>Crystal field</s0>
<s5>23</s5>
</fC03>
<fC03 i1="02" i2="3" l="FRE"><s0>Composé ternaire</s0>
<s5>50</s5>
</fC03>
<fC03 i1="02" i2="3" l="ENG"><s0>Ternary compounds</s0>
<s5>50</s5>
</fC03>
<fC03 i1="03" i2="3" l="FRE"><s0>Grenat aluminium yttrium</s0>
<s5>51</s5>
</fC03>
<fC03 i1="03" i2="3" l="ENG"><s0>YAG</s0>
<s5>51</s5>
</fC03>
<fC03 i1="04" i2="3" l="FRE"><s0>Semiconducteur III-V</s0>
<s5>52</s5>
</fC03>
<fC03 i1="04" i2="3" l="ENG"><s0>III-V semiconductors</s0>
<s5>52</s5>
</fC03>
<fC03 i1="05" i2="3" l="FRE"><s0>Composé binaire</s0>
<s5>53</s5>
</fC03>
<fC03 i1="05" i2="3" l="ENG"><s0>Binary compounds</s0>
<s5>53</s5>
</fC03>
<fC03 i1="06" i2="3" l="FRE"><s0>Matériau optique</s0>
<s5>57</s5>
</fC03>
<fC03 i1="06" i2="3" l="ENG"><s0>Optical materials</s0>
<s5>57</s5>
</fC03>
<fC03 i1="07" i2="X" l="FRE"><s0>Cristal cubique</s0>
<s5>61</s5>
</fC03>
<fC03 i1="07" i2="X" l="ENG"><s0>Cubic crystals</s0>
<s5>61</s5>
</fC03>
<fC03 i1="07" i2="X" l="SPA"><s0>Cristal cúbico</s0>
<s5>61</s5>
</fC03>
<fC03 i1="08" i2="3" l="FRE"><s0>Arséniure de gallium</s0>
<s2>NK</s2>
<s5>62</s5>
</fC03>
<fC03 i1="08" i2="3" l="ENG"><s0>Gallium arsenides</s0>
<s2>NK</s2>
<s5>62</s5>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>Arséniure d'aluminium</s0>
<s2>NK</s2>
<s5>63</s5>
</fC03>
<fC03 i1="09" i2="3" l="ENG"><s0>Aluminium arsenides</s0>
<s2>NK</s2>
<s5>63</s5>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>Arséniure d'indium</s0>
<s2>NK</s2>
<s5>64</s5>
</fC03>
<fC03 i1="10" i2="3" l="ENG"><s0>Indium arsenides</s0>
<s2>NK</s2>
<s5>64</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>Grenats</s0>
<s5>65</s5>
</fC03>
<fC03 i1="11" i2="3" l="ENG"><s0>Garnets</s0>
<s5>65</s5>
</fC03>
<fC03 i1="12" i2="X" l="FRE"><s0>Effet néphélauxétique</s0>
<s5>66</s5>
</fC03>
<fC03 i1="12" i2="X" l="ENG"><s0>Nephelauxetic effect</s0>
<s5>66</s5>
</fC03>
<fC03 i1="12" i2="X" l="SPA"><s0>Efecto nefelauxético</s0>
<s5>66</s5>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>YAG</s0>
<s4>INC</s4>
<s5>71</s5>
</fC03>
<fC03 i1="14" i2="3" l="FRE"><s0>GaAs</s0>
<s4>INC</s4>
<s5>72</s5>
</fC03>
<fC03 i1="15" i2="3" l="FRE"><s0>Gd3Ga5O12</s0>
<s4>INC</s4>
<s5>73</s5>
</fC03>
<fC03 i1="16" i2="3" l="FRE"><s0>GGG</s0>
<s4>INC</s4>
<s5>74</s5>
</fC03>
<fC03 i1="17" i2="3" l="FRE"><s0>Al O Y</s0>
<s4>INC</s4>
<s5>75</s5>
</fC03>
<fC03 i1="18" i2="3" l="FRE"><s0>As Ga</s0>
<s4>INC</s4>
<s5>76</s5>
</fC03>
<fC03 i1="19" i2="3" l="FRE"><s0>Grenat gadolinium gallium</s0>
<s4>INC</s4>
<s5>77</s5>
</fC03>
<fC03 i1="20" i2="3" l="FRE"><s0>Ga Gd O</s0>
<s4>INC</s4>
<s5>78</s5>
</fC03>
<fC03 i1="21" i2="3" l="FRE"><s0>AlAs</s0>
<s4>INC</s4>
<s5>83</s5>
</fC03>
<fC03 i1="22" i2="3" l="FRE"><s0>InAs</s0>
<s4>INC</s4>
<s5>84</s5>
</fC03>
<fC03 i1="23" i2="3" l="FRE"><s0>As In</s0>
<s4>INC</s4>
<s5>85</s5>
</fC03>
<fC03 i1="24" i2="3" l="FRE"><s0>4270</s0>
<s4>INC</s4>
<s5>86</s5>
</fC03>
<fN21><s1>322</s1>
</fN21>
</pA>
<pR><fA30 i1="01" i2="1" l="ENG"><s1>International Conference on the Physics of Optical Materials and Devices-ICOM</s1>
<s2>3</s2>
<s3>Belgrade SRB</s3>
<s4>2012-09-02</s4>
</fA30>
</pR>
</standard>
</inist>
</record>

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Systematic analysis of the spectroscopic characteristics of 3d ions in a free state and some cubic crystals

Systematic analysis of the spectroscopic characteristics of 3d ions in a free state and some cubic crystals

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri